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FOUP Cleaner

Process Application
- 300 mm FOUP Cleaning
- All FOUP applications (Shinetsu, Entergrise etc.)
- NFC300(Normal), VFC300 & VFC301(Vacuum)
System Performance
- Separate cleaning of FOUP Body and FOUP
- Spin RPM: Body 0~10 RPM, Cover 0~400 RPM
- 2(Body) x 2(Cover) Cleaning Chambers
- Nozzle: High pressure spray
- Hot DI Cleaning & Hot CDA Drying
- N₂ Purge & Close system
- UPEH: 21 FOUPs/hour
The Merits
- Small Footprint (the smallest area in the world)
- High throughput, N₂ Purge & Close system
Robot
- X-Y-Z-R Axis Robot
- Auto Tilting, High Power, Fast Speed

NEW FOUP Cleaner

Process Application
- 300 mm FOUP Cleaning
- All FOUP applications (Shinetsu, Entergrise etc.)
- VFC310 (New Vacuum)
System Performance
- Separate cleaning of FOUP Body and FOUP
- Spin RPM: Body 0~10 RPM, Cover 0~400 RPM
- 3(Body) x 3(Cover) Cleaning Chambers
- Nozzle: High pressure spray
- Hot DI Cleaning & Hot CDA Drying
- N₂ Purge & Close system
- UPEH: 28 FOUPs/hour
The Merits
- Small Footprint (the smallest area in the world)
- High throughput, N₂ Purge & Close system
Robot
- 6-Axis Multi-joint Robot
- Auto Tilting, High Power, Fast Speed

FOUP Inspection System

Purpose
- FOUP Appearance and Internal Inspection
- Damage detection and dimensional inspection, such as breakage, imprinting, and wafer powder
The Merits
-Combined with FOUP Cleaner at Buyer’s request
- Improved detection power through Image Processing
Category Items to Inspect
FOUP Inside
  • - Wafer Removed
  • - Slot Pitch, Width
  • - Damage, Pieces of Broken Wafer
FOUP Door
  • - Retainer Tips Damage, Pitch
  • - Gasket Damage, Position
FOUP Top
  • - Handling Flange Missing Screw
  • - Flange Damage
FOUP Bottom
  • - Missing Screw
  • - Broken, Crack, Damage
FOUP Side
  • - Side · Handle Damage
  • - Fixed Latch Damage

PECVD

SiRiUS - Single CH Type

Unique Design
- Dual Chamber Structure
  (Ceramic Bowl in Chamber)
- Symmetric Gas Flow and TEMP
Patent
- Dual Chamber: Bowl Structure
- Movement Structure of Dual Bellows

SiRiUS II – Twin CH Type

System Configuration (Single/TWIN)
- ALN Heater: ∼550℃
- RF : Single (13.56Mhz)
        : Dual (13.56Mhz/400Khz)
- Separate RPS
Process Integrated System
- SiCN (>500℃ / 350℃ / <200℃)
- SiN, SiON , SiO2 (SiH4)

Unique Chamber(Dual Chamber)

Performance
- Better THK. Uniformity: <2.0% : Symmetric gas flow and tem
- Low level of particle generation
- Effective Cleaning cycle
- High Dry cleaning efficiency
  : Small Processing Volume
  : Warm wall (Bowl) effect > Lower film adding and Higher Dry etching rate on Bowl surface

GAS Flow Analysis

Temperature Analysis

Lower CoO
- High Throughput
- Reduced Gas Consumption : Small Processing Volume
- Longer MTBF & Shorter MTTR
- Less Consumable Parts

Sorter/ EFEM

200mm Sorter 4 Cassette

300mm Compiler 10 FOUPs

SEMI Standard Compliance Fully Integrated System
- Mini-Environment
- Wafer Transfer Robot (included Y-base)
- FOUP Opener
- Pre-Aligner (Non contact wafer align)
- Robot M.I Sensor
- Quality and human safety sensors fitted
Easy Operating & Maintenance
- User I/F with color touch screen
- User requested S/W available

300mm Sorter 4 FOUPs

300mm EFEM 3 FOUPs

High Reliability & Short Cycle Time
Easy Interoperability
FOSB / 2FOUP to 4FOUP Available
8~12 Port Compiler production